▶연구실 홈페이지

https://sites.google.com/view/esdpjunslab

▶학력

- 포항공과대학교 공학박사 (졸업 '23.02)

- 광운대학교 공학석사 (졸업 '20.02)

- 광운대학교 공학사 (졸업 '18.02)

 

▶경력

- 2023.03 ~ 2025.08 : 삼성전자 반도체연구소 FLASH TD, 책임연구원

 

 

▶연구분야

- https://scholar.google.com/citations?user=GvRD21sAAAAJ&hl=ko

 

SCI(E) & SCOPUS 논문

[1] C. Lee*, et al., “Improvement of weight update and retention characteristics of Pr0.7Ca0.3MnO3-x ECRAM via elevated temperature training”, Nanoscale 2024

[2] C. Lee*, et al., “Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor”, Applied Physics Letters 2021

[3] C. Lee*, et al., “Excellent Synapse Characteristics of 50 nm Vertical Transistor with WOx channel for High Density Neuromorphic system”, 2021 Symposium on VLSI Technology and Circuit 2021

[4] C. Lee*, et al., “Improved On-chip Training Efficiency at Elevated Temperature and Excellent Inference Accuracy with Retention (> 108 s) of ECRAM Synapse for Hardware Neural Network”, 2021 IEEE International Electron Device Meeting (IEDM) 2021

[5] C. Lee*, et al., “Li memristor-based MOSFET synapse for linear I–V characteristic and processing analog input neuromorphic system Japanese Journal of Applied Physics 2021

[6] C. Lee*, et al., “Pr0.7Ca0.3MnO3-based three-terminal synapse for neuromorphic computing”, IEEE Electron Device Letters 2020

[7] C. Lee*, et al., “Two-terminal ionic electrochemical reaction abased synaptic device for neuromorphic system,” IEEE Electron Device Letters, 2019

[8] C. Lee*, et al., “Applicability of Aerosol Deposition Process for flexible electronic device and determining the Film Formation Mechanism with Cushioning Effects”, Scientific Reports, 2019

[9] J. Park* , C. Lee* , (equal contribution), et al., “Microstructural Electrode for Enhancing Linear and Symmetric Conductance Changes in a TiOx-based Synapse Device”, Nanotechnology, 2019

[10] C. Lee*, et al.,, “Electrical Effect of High-field Induced Diffusive Metal in the Ceramic Film deposited by the Aerosol Deposition Method” Electronic Materials Letters 2019

[11] C. Lee*, et al., “Compensated synaptic device for improved recognition accuracy of neuromorphic system,” IEEE Journal of the Electron Devices Society. 2018

[12] C. Lee*, et al., “Selectable Titanium-oxide Based Critical and Differential Temperature Sensor in a Single Device,” IEEE Electron Device Letters, 2018

[13] C. Lee*, M. Kim, S. M. Koo, J. M. Oh, & D. Lee*, “Titanium-oxide based Nanoscale and Embeddable Sub-zero Temperature Sensor using MIT Deformation Characteristics,” Nanotechnology, 2018

 

CONFERENCES

[1] C. Lee*, et al., “Excellent Synapse Characteristics of 50 nm Vertical Transistor with WOx channel for High Density Neuromorphic system”, 2021 Symposium on VLSI Technology and Circuit 2021

[2] C. Lee*, et al., “Improved On-chip Training Efficiency at Elevated Temperature and Excellent Inference Accuracy with Retention (> 108 s) of ECRAM Synapse for Hardware Neural Network”, 2021 IEEE International Electron Device Meeting (IEDM) 2021

[3] C. Lee*, et al., “Resistive Switching Characteristics of Aerosol Deposition Method Based Conductive Bridge Random Access Memory”, 2018 ISAF-FMA-AMF-AMEC-PFM

[4] C. Lee*, et al.,, “Li-ion based Two-terminal Synaptic Device for Neuromorphic System” The 26st Korean Conference on Semiconductors (KCS), Republic of Korea.

[5] C. Lee*, et al.,“Nano-scaled and Embeddable Titanium-oxide Based Sub-zero Temperature Sensor with High Uniformity and Stability”, The Korean Institute of Electrical and Electronic Materials Engineers, Republic of Korea.

 

Patent

[1] 3D vertical Memory Device and Manufacturing Method Thereof (US 출원 특허)

[2] Neuromorphic Device and Unit Synapse Device Forming the same (US 출원 특허)

[3] 3D vertical memory device and manufacturing method thereof (국내 등록 특허)

[4] Neuromorphic Device and Unit synapse device forming the same (국내 등록 특허)

[5] 3-terminal synapse device and maximum conductance limiting method using the same

[6] Neuromorphic system using a 3-terminal synapse device (국내 등록 특허)

[7] New two-terminal synapse device (국내 등록 특허)

[8] Synapse device comprising a barrier layer for ion and a method of manufacturing the same (국내 등록 특허)

[9] Electrochemical device comprising an active layer with a controlled porosity and a method of manufacturing the same (국내 등록 특허)

[10] An efficient neuromorphic circuit system of realizing negative weight (국내 등록 특허)

[11] A synapse component having linear current-voltage characteristic and neural network using the synapse (국내 등록 특허)

[12] Resistance change metal oxide based temperature sensor (국내 등록 특허)

[13] Flexible resistance change electronic device using Aerosol Deposition Process and method thereof (국내 등록 특허)

 

◆ 수상내역

[1] 포항공과대학교 신소재공학과 최우수신진 박사상 (2023)

[2] 한국재료연구원 우수논문상 (2023)